G. Stareev : rechercher sur Z-Library

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1

Optimization of varicap diode design

Georgi D. Stareev

Journal:

Solid-State Electronics

Année:

1977

Langue:

english

Fichier:

PDF, 291 KB

english, 1977

2

A new method for liquid phase epitaxy

Georgi D. Stareev

Journal:

Journal of Crystal Growth

Année:

1976

Langue:

english

Fichier:

PDF, 2.67 MB

english, 1976

3

Selective epitaxial growth of GaAs from the liquid phase

M.M. Piskorski, G.D. Stareev

Journal:

Solid-State Electronics

Année:

1975

Langue:

english

Fichier:

PDF, 1.03 MB

english, 1975

4

Comments on “The effects of sputtering damage on the characteristics of molybdenum-silicon Schottky barrier diodes”

G.D. Stareev, D.Y. Marvakov

Journal:

Solid-State Electronics

Année:

1977

Langue:

english

Fichier:

PDF, 110 KB

english, 1977

5

Gas source MBE growth of 1.3 μm-InAsP/InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output power

Hin Yiu Chung, Georgi Stareev, Jürgen Joos, Matthias Golling, Jürgen Mähnß, Karl Ebeling

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 123 KB

english, 1999

6

Laser-excited fluorescence of perylene by using self-induced second-harmonic and sum-frequency radiation emanating from high-power AlGaAs double hetero-type diodes

G. Stareev, A. Balter, Gawrilow, D. Sowada

Journal:

Applied Physics B: Lasers and Optics

Année:

1996

Langue:

english

Fichier:

PDF, 555 KB

english, 1996

7

A new technique for fabrication of Schottky barrier diodes

Georgi D. Stareev

Journal:

Solid-State Electronics

Année:

1977

Langue:

english

Fichier:

PDF, 324 KB

english, 1977

8

A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ion beam sputtering

G. Stareev, A. Umbach

Journal:

Journal of Electronic Materials

Année:

1991

Langue:

english

Fichier:

PDF, 343 KB

english, 1991

9

Suicidal ideation and comorbidity in patients with the DSM-IV panic disorder width agoraphobia

V. Stareevic, G. Bogojevic

Journal:

European Neuropsychopharmacology

Année:

1998

Langue:

english

Fichier:

PDF, 185 KB

english, 1998

10

[IEEE Conference on Lasers and Electro-Optics Europe - Amsterdam Netherlands (28 August -2 September, 1994)] Conference on Lasers and Electro-Optics Europe - Nearly-ideal Au/Pt-n-(p+n-) Al/sub 0.48/In/sub 0.52/As Schottky contacts with a barrier height of 1.09 eV for high-speed photodetectors and transistors

Stareev, G., Fricke, A., Sowada, D., Kummetz, T., Mahnss, J., Kowalsky, W., Ebeling, K.J.

Année:

1994

Langue:

english

Fichier:

PDF, 306 KB

english, 1994

11

[IEEE Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan (11-15 May 1998)] Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) - Very low threshold current density 1.3 μm-InAsP/InGaAsP strained quantum well GRINSCH lasers grown by gas source MBE

Chung, H.Y.A., Stareev, G., Joos, J., Maehnss, J., Ebeling, K.

Année:

1998

Langue:

english

Fichier:

PDF, 264 KB

english, 1998

12

Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs

Journal:

Applied Physics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 657 KB

english, 1993

13

A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors

Stareev, G., Künzel, H., Dortmann, G.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 1.89 MB

english, 1993

14

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar/sup +/ ion beam sputtering

Stareev, G., Umbach, A., Fidorra, F., Roehle, H.

Année:

1991

Langue:

english

Fichier:

PDF, 311 KB

english, 1991

15

1.09-eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited on n- and p+n-Al0.48In0.52As layers

Fricke, A., Stareev, G., Kummetz, T., Sowada, D., Mähnss, J., Kowalsky, W., Ebeling, K. J.

Journal:

Applied Physics Letters

Année:

1994

Langue:

english

Fichier:

PDF, 640 KB

english, 1994

16

Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs

Stareev, G., Künzel, H.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 706 KB

english, 1993

17

Erratum: ‘‘A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors’’ [J. Appl. Phys. 74, 7344 (1993)]

Stareev, G., Künzel, H., Dortmann, G.

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 295 KB

english, 1994

18

Multilayer CrPtCr/NiAu ohmic contacts with p -type GaAs in heterojunction laser structures

Wójcik, I, Stareev, G, Barcz, A, Domański, M

Journal:

Soviet Journal of Quantum Electronics

Année:

1988

Langue:

english

Fichier:

PDF, 259 KB

english, 1988

19

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Light-Emitting Diodes: Research, Manufacturing, and Applications III - Infrared light-emitting diodes with lateral outcoupling taper for high extraction efficiency

Schmid, Wolfgang, Eberhard, Franz, Schauler, Markus, Grabherr, Martin, King, Roger, Miller, Michael, Deichsel, Eckard, Stareev, G., Martin, Ulrich, Jaeger, Roland, Joos, J., Michalzik, Rainer, Ebeling

Année:

1999

Langue:

english

Fichier:

PDF, 2.23 MB

english, 1999

20

SPIE Proceedings [SPIE Optical Fibres and Their Applications - Warsaw, Poland (Saturday 1 February 1986)] Optical Fibres and Their Applications IV - High Power Pulse Lasers For Fiber Optic Measurements

Stareev, Georgi, Mroziewicz, Bohdan, Banasiak, Slawomir, Dobosz, Elzbieta, Romaniuk, Ryszard S., Szustakowski, Mieczyslaw

Année:

1986

Langue:

english

Fichier:

PDF, 232 KB

english, 1986